r07ds1283ej0200 rev.2.00 page 1 of 6 jul 10, 2015 preliminary data sheet pa603ct p-channel mosfet for switching description the UPA603CT, p-channel vertical type mosfet design ed for general-purpose switch, is a device which can be driven directly by a 4.5 v power source. features ? two mosfet circuits ? directly driven by a 4.5 v power source. ? low on-state resistance r ds(on)1 = 2.7 ? max. (v gs = -10 v, i d = -100 ma) r ds(on)2 = 3.2 ? max. (v gs = -4.5 v, i d = -50 ma) ordering information part number lead plating packing package UPA603CT-t1-a/at -a : sn-bi , -at : pure sn 3000p/reel sc-74 (6pmm) remark "-a/at" indicates pb-free. this product does not contain pb in external electrode and other parts. marking ud absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss -60 v gate to source voltage (v ds = 0 v) v gss ? 20 v drain current (dc) i d(dc) ? 100 ma drain current (pulse) note i d(pulse) ? 200 ma total power dissipation p t 300 (total) mw channel temperature t ch 150 ? c storage temperature t stg ? 55 to ? 150 ? c note pw ? 10 ? s, duty cycle ? 1% r07ds1283ej0200 rev.2.00 jul 10, 2015
pa603ct r07ds1283ej0200 rev.2.00 page 2 of 6 jul 10, 2015 electrical characteristics (t a = 25 ? c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = -60 v, v gs = 0 v -1 ? a gate leakage current i gss v gs = ? 20 v, v ds = 0 v ? 10 ? a gate to source cut-off voltage v gs(off) v ds = v gs , i d = -250 ? a -1.0 -2.5 v forward transfer admittance note | y fs | v ds = -10 v, i d = -100 ma 150 ms drain to source on-state resistance note r ds(on)1 v gs = -10 v, i d = -100 ma 1.8 2.7 ? r ds(on)2 v gs = -4.5 v, i d = -50 ma 2.0 3.2 ? input capacitance c iss v ds = -10 v, 9 pf output capacitance c oss v gs = 0 v, 7 pf reverse transfer capacitance c rss f = 1.0 mhz 2 pf turn-on delay time t d(on) v dd = -10 v, 75 ns rise time t r i d = -200 ma, 110 ns turn-off delay time t d(off) v gs = -10 v, 900 ns fall time t f r g = 10 ? 400 ns total gate charge q g i d = -200 ma, v dd = -25 v, v gs = -10 v 2.2 nc body diode forward voltage note v f(s-d) i f = -200 ma, v gs = 0 v 0.86 v note pulsed ? test circuit switching time
pa603ct r07ds1283ej0200 rev.2.00 page 3 of 6 jul 10, 2015 typical characteristics (t a = 25 ? c) derating factor of forward bias safe operating area total power dissipation vs. ambient temperature dt - percentage of rated power - % ? 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t a ? ambient temperature - ? c p t - total power dissipation - mw 0 100 50 150 200 250 300 350 025 50 75 100 125 150 per one unit free air total t a ? ambient temperature - ? c drain current vs. drain to source voltage forward transfer characteristics i d - drain current - ma 0 ? 20 ? 40 ? 60 ? 80 ? 100 ? 120 ? 140 ? 160 ? 180 ? 200 0 ? 2 ? 1 pulsed v gs = ? 10 v ? 4.5 v v ds - drain to source voltage - v i d - drain current - a ? 0.0001 ? 0.001 ? 0.01 ? 0.1 ? 1 t a =125c 75c 100c 25c ?25c 0 ?2 ?1 ?4 ?3 ? 5 v ds = ? 5 v pulsed v gs - gate to source voltage ? v gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate cut-off voltage - v ? 1 ? 1.5 ? 2 ? 2.5 ? 3 -50 0 50 100 150 v ds =v gs i d = ? 250 a t ch - channel temperature - ? c | y fs | - forward transfer admittance - s 0.01 0.1 10 1 t a =125c 75c 100c 25c ?25c ? 0.01 ? 0.1 ? 1 v ds = ? 10 v pulsed i d - drain current - a
pa603ct r07ds1283ej0200 rev.2.00 page 4 of 6 jul 10, 2015 drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - ? 0 5 10 pulsed ? 0.001 ? 0.01 ? 0.1 ? 1 ? 10 ? 10 v v gs = ? 4.5 v i d - drain current - a r ds(on) - drain to source on-state resistance - ? 0 5 10 pulsed 0 ?2 ?4 ?6 ?8 ?10 ? 12 i d = ? 100 ma ? 50 ma v gs ? gate to source voltage - v drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - ? 0 1 2 3 4 5 -25 0 25 50 75 100 125 pulsed v gs = ? 4.5 v, i d = ? 50 ma ? 10 v, ? 100 ma t ch - channel temperature - ? c c iss , coss , crss - capacitance - pf 0.1 1 10 100 v gs =0 v f= 1.0 mhz c iss c oss c rss ? 0.1 ? 1 ? 100 ? 10 v ds - drain to source voltage ? v switching characteristics dynamic input characteristics t d(on), tr, t d(off), t f - switching time - ns 1 10 100 1000 t r ? 0.001 ? 0.01 ? 0.1 ? 1 t d(on) t f t d(off) v dd = ? 10 v, v gs = ? 10 v r g =10 ? i d - drain current - a v gs ? gate to source voltage - v 0 ? 2 ? 4 ? 6 ? 8 ? 10 0123 ? 30 v v dd = ? 48 v ? 25 v i d = ? 200 ma q g ? gate chage - nc
pa603ct r07ds1283ej0200 rev.2.00 page 5 of 6 jul 10, 2015 source to drain diode forward voltage forward bias safe operating area i f ? diode forward current - a ? 0.001 ? 0.01 ? 0.1 ? 1 0 ?0.4 ?0.2 ?0.8 ?0.6 ?1.2 ?1 v f(s-d) ? source to drain voltage - v i d - drain current - a ?0.01 ?0.1 ? 1 ?1 ?10 ?100 id(pulse)= ?200ma dc power dissipation limited id(dc)= ?100ma 10ms 100ms ta=25c single pulse v ds - drain to source voltage ? v
pa603ct r07ds1283ej0200 rev.2.00 page 6 of 6 jul 10, 2015 package drawings (unit: mm) sc-74 (6pmm) equivalent circuit remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 pa603ct rev. date description page summary 1.00 sep , 2013 ? first edition issued 2.00 jun, 2015 2 - changed electrical characteristics - changed test circuit switching time 3, 4, 5 changed all graphs
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